发明名称 GLASS FOR PASSIVATION OF SILICON SEMICONDUCTOR ELEMENT
摘要 <p>PURPOSE:To obtain a glass protective film having small heat expansion coefficient and large insulation resistance by employing ZnO, B2O3 and V2O5 specified in composition as glass for the passivation of an Si element. CONSTITUTION:58-67mol% ZnO, 15-23mol% B2O3, and 10-27mol% V2O5 are used as glass for passivation of the Si element. That is, the ingradients thus weighed are sufficiently mixed by a dry mixing process, the mixture is filled in a Pt crucible, and is, in order to prevent the reduction of the V2O5, heated at 1,200 deg.C for 3hr in oxide atmosphere including the O2. Thereafter, this molten mixture is flowed onto a steel plate of room temperature, the obtained crystallizable glass is pulverized as glass of ZnO-B2O3-V2O5, is thereafter screened, and glass for passivation is thus formed. In this manner the temperature at the time of forming a protective film can be less than the alloying temperature of aluminum electrode with Si, the production process can be simplified, and there can further be formed preferable characteristic protective film.</p>
申请公布号 JPS5632751(A) 申请公布日期 1981.04.02
申请号 JP19790108359 申请日期 1979.08.24
申请人 MITSUBISHI ELECTRIC CORP 发明人 OONO KATSUHIRO;OKAMOTO REIJI
分类号 C03C3/14;C03C8/04;H01L21/316;H01L23/29;H01L23/31 主分类号 C03C3/14
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