| 发明名称 |
Device fabrication by plasma etching |
| 摘要 |
Integrated circuit fabrication, e.g., silicon LSI is expedited by plasma etching in any of a novel class of etchants. Appropriate plasma environments are produced by introduction of halide-halogen combinations as exemplified by BCl3-Cl2.
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| 申请公布号 |
US4256534(A) |
申请公布日期 |
1981.03.17 |
| 申请号 |
US19780929567 |
申请日期 |
1978.07.31 |
| 申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
LEVINSTEIN, HYMAN J.;WANG, DAVID N. |
| 分类号 |
H01L21/302;C23F4/00;H01L21/02;H01L21/3065;H01L21/3213;(IPC1-7):C23F1/00;C23F1/02 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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