| 摘要 |
PURPOSE:To reduce a through type current, junction leakage current and drain capacity of the semiconductor integrated circuit by implanting O2 ion to the drain, source and isolation portion of an MOS transistor forming an inverter of an oscillator circuit and forming a selective oxide films and shallow diffused layer. CONSTITUTION:A P<->-type region is diffused in an N<->-type semiconductor substrate, and when forming P-channel and N-channel transistors 9 upon formation of shallow N<+>-type diffused regions in the P<->-type region and in the substrate surface layer isolated from the P<->-type region, they are formed by an O2<+> ion implantation. Oxide films 8a, 8b becoming channel stoppers disposed between the regions are simultaneously formed by the O2 ion implantation. In this manner, two transistors can be simultaneously conducted to reduce the through type current to be adapted for an IC for a watch. |
