| 摘要 |
PURPOSE:To carry out the improvement in the integrating degree of the electrostatic induction type semiconductor logic circuit device made of longitudinal bipolar transistors and junction type field effect transistors by disposing the bipolar transistors longitudinally. CONSTITUTION:An N-type semiconductor region 17 is formed by a selective diffusion process at predetermined portion on one main surface on a low specific resistance P-type semiconductor substrate 14. An N-type semiconductor layer 12 is formed by epitaxial growth on one main surface of the substrate 14 and the region 17. A ring-shaped P-type semiconductor region 15 is formed at predetermined interval from the substrate 14 on one main surface of the layer 12, and an N-type semiconductor region 11' isolated at predetermined interval from the region 14 and an N- type semiconductor region 16 formed in shallower depth than the region 15 at predetermined interval from the region 15 on the exposed layer 12 from the opening A of the region 15 are formed on the one main surface of the layer 12. In this manner, a PNP-type transistor 101 and an N channel junction type electrostatic induction transistor 102 are formed. |
