| 摘要 |
PURPOSE:To form the titled thin film having high transmittance on a low m.p. substrate by heating a hermetically sealed crucible in a vacuum vessel, ionizing a cluster of atoms of Sn or the like generated from the spouting hole of the crucible and O2 introduced under a predetermined pressure, and depositing the ions on the substrate. CONSTITUTION:O2 is introduced into vacuum vessel 1 of <=10<-4>Torr from pipe 3 to apply 2X10<-5>-10<-3>Torr partial pressure, and hermetically sealed crucible 211 holding Sn or In is heated to generate a cluster of Sn or In atoms from spouting hole 212. Electron ions from electron generator 22 are hit against the above-mentioned O2 and the cluster to ionize them, and the ions are accelerated in an electric field and hit against insulating molded substrate 5 made of polymer or other material to deposit Sn or In oxide. Thus, the titled thin film with superior transparency is formed on such a low m.p. substrate without using a harmful substance and causing a problem about environmental pollution. This film is suitably applied to windowpanes of aircraft, etc. |
