| 摘要 |
PURPOSE:To make it possible to evaluate a film quickly and continuously in a flow manner, without cutting an ion sensor into chips and therefore with maintaining the sensor in the state of a wafer, by providing an electric connection part with the outside of an element at an end portion of the wafer. CONSTITUTION:An ion sensitive field effect transistor (ISFET) 22 is formed by silicon in the form of an island onto a sapphire substrate 21. An enzyme film 25 is formed at an ion sensitive part of the ISFET 22. A source 23 and a drain 24 of the ISFET 22 are gathered at one end of a wafer. Accordingly, only by placing the electrode unit of the source 23 and drain 24 outside a liquid, the characteristic evaluation of the enzyme film 25 is effected by the ISFET 22, with no necessities to cut the ISFET. Moreover, if the enzyme film 25 once measured is boiled in nitric acid and separated, a fresh enzyme film can be formed again and evaluated with ease. |
