| 摘要 |
PURPOSE:To obtain a spherical surface of good shape when making a semiconductor crystal surface into an isotropic spherical shape, by forming a hemispherical mask of an organic substance coating on the central surface of the crystal and applying ion beam etching through said mask to transcriber the spherical shape of the mask to the crystal. CONSTITUTION:When making a semiconductor light emitting element, photoresist film 32 is applied all over the light take-out surface of a semiconductor crystal layer 31, and the film 32 is changed into an almost circular pattern mask 32' by applying exposing and developing treatment. Next, applying heat in the nonoxidizing atmosphere to such an extent that the mask will not burn, for baking the element, the mask 32' is changed into a spherical shaped mask 32'' by its surface tension. Next, by projecting the ion beams of an inactive gas such as Ar and continuing the etching until the mask 32'' disappears completely, the spherical shape of the mask 32'' is transcribed to the surface of the layer 31. If necessary, the layer 31 is rotated and the beams are projected from above diagonally. By so doing, a hemisphere of good shape can be obtained and connection with light fibers can be improved. |
