| 摘要 |
PURPOSE:To restrain the production of parasitic MOS due to Al evaporated wiring by burying a field shielding layer of a metal having a high melting point in the oxide film provided on a semiconductor substrate, the field shielding layer being connected to the substrate through a high impurity atom concentration layer. CONSTITUTION:A SiO2 film 13a is formed on a Si substrate 10, and provided with windows 20 for permitting a metal having a high melting point to contact to the substrate 10. On the portions of the substrate 10 exposed in the windows 20, high- concentration regions 15 of the same conductive type as the substrate 10 are formed by ion implantation or the like. Then the film 13a is removed by using hydrofluoric acid, and a SiO2 film 13b is newly grown, which is provided with windows corresponding to the regions 15. The whole surface is coated with a metal layer 14 of W, Ta, Mo or the like having a high melting point so that the layer 14 contacts the regions 15. After that, windows 21 are opened in the laminate of the layer 14 and the film 13b. On the portions of the substrate 10 exposed in the windows 21, reverse conducting source and drain regions 11 and 12 for an MOSFET are formed by diffusion. Then the whole surface is covered with a SiO2 film 13, in which contact holes are made to provide Al electrodes 16-18 in the source, drain and gate regions. |
