| 摘要 |
PURPOSE:To aviod the occurrence of cracks even when heating and cooling are repeated and to prevent the discharge of impurity from the base material by making a crucible for drawing up Si, a susceptor for a reactor and a heater, etc. of carbonic base material which is protected with a specific carbide film coating. CONSTITUTION:A crucible for drawing up Si, a susceptor for a reactor and a heater which are used for manufacturing the semiconductor are made carbonic base material, these surfaces are protected with silicon carbide film. Here the film is formed so that it may show 0.35 deg. or less when the peak width at half height of the (200) face in the X-ray diffraction is measured by Kalpha of Cu and the area ratio of the film in which the maximum width of the particle boundary in the polished face of the film surface is 0.15t+5mum or more may be 30% or more when the thickness of film is t. To obtain such a film, the units are put in a decompressed reaction chamber made of carbon or silicon carbide, and silica powder contained in a carbonic vessel is evaporated and deposited onto the surface of the units. |
