| 摘要 |
PURPOSE:To increase the sensitivity and resolution of a resist material to a high energy beam and make the material suitable for lithography by using a copolymer of n-butyl-alpha-chloroacrylate and glycidyl methacrylate (nBCG) as the resist material. CONSTITUTION:A soln. of nBCG represented by the formula in methylcellosolve acetate is dropped onto an Si substrate or the like, uniformly applied by rotation or other method, and heat treated at 130 deg.C for about 30min to form a film of about 0.8-1mu thickness. The film is patternwise irradiated with far ultraviolet rays or electron beams, and the unexposed part is removed with a developer contg. cyclohexane. Heat treatment is then carried out at 100 deg.C for 30min to obtain a minute resist pattern with high sensitivity and resolution. The sensitivity of this pattern with high accuracy is 25-113 times as high as that of a conventional methacrylate polymer pattern. This pattern is especially suitable for use in the manufacture of an integrated circuit. |
