| 摘要 |
PURPOSE:To obtain a high film forming speed in an amorphous silicon film by ionizing a silicon, a doping element and hydrogen in a space formed via a high frequency power and DC bias and forming a silicon film on a substrate via a negative DC bias to introduce a variety of impurities thereto. CONSTITUTION:Hydrogen gas is supplied into a bell-jar 1, which is reduced in pressure to low pressure as desired. An electron beam 9 is irradiated from an electron gun 11 to a silicon source 3 containing a doping element such as aluminum or gallium to render evaporation of a silicon ingot containing the doping element. The silicon thus evaporated, the doping element and the hydrogen as an atmospheric gas are ionized in a discharge space formed via a DC bias from a DC power supply 6 and the high frequency power from a high frequency coil 7, are attracted onto the substrate 3 retained by a holder 2 via negative DC bias applied to the substrate holder 2 to form a silicon film therat. In this manner, a variety of impurities can be introduced thereto, and high film forming speed can be imparted thereto. |
