Anisotropic wet etching of chalcogenide glass resists

摘要

A method for enhancing linewidth control during the patterning of a substrate with a resist is disclosed. Resists used in the invention have chemically separated structures characterized by two types of regions of different chemical composition, which different types of regions are interspersed among each other. Because the resists used in the present invention have chemically separated structures, anisotropic wet development of these resists is achievable with an appropriate bicomponent wet developer. Consequently, after exposure, the image formed in a thin, upper layer of the resist is transferred with vertical walls through the thickness of the resist.