| 摘要 |
PURPOSE:To absorb defects on the element forming regions with the gettering on the damage treating area by irradiating laser beam or the like on the element forming surface of the wafer to cause the thermal stress, followed by heat treatment. CONSTITUTION:A laser beam of proper intensity enough to prevent defects on the crystal such as dislocation from developing outwards from the damaged area is used to irradiate on a portion of the element forming surface of the wafer 1 to form a damage region 2. Then, the wafer 1 thus treated undergoes a treatment so that defects on the specified element forming region 3 can be absorbed by the damaged region 2. The damaged region is formed surrounding the wafer, or on all the areas in no way affecting the characteristics of the device in the chip and further on a scribe line or the like. |
