发明名称 PRODUCTION OF LITHGRAPHY MASK
摘要 In order to make a mask for use in lithography a layer of reflective material is first deposited on a substrate which is transparent to the radiation with which the mask is to be used; a layer of photoresist then deposited; the photoresist exposed with the desired pattern by UV radiation; the photoresist developed to expose the reflective material in the areas where it is desired to deposit an absorber material; the reflective material etched away from these areas undercutting the resist; the absorber deposited through the openings in the resist and reflective layer and the resist then lifted off.
申请公布号 JPS565981(A) 申请公布日期 1981.01.22
申请号 JP19800085975 申请日期 1980.06.26
申请人 PERKIN ELMER CORP 发明人 UIRIAMU DERIKU BATSUKUREE
分类号 C23F1/00;G03F1/00;G03F7/09;H05K3/00;H05K3/04;H05K3/06 主分类号 C23F1/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利