发明名称 |
PRODUCTION OF LITHGRAPHY MASK |
摘要 |
In order to make a mask for use in lithography a layer of reflective material is first deposited on a substrate which is transparent to the radiation with which the mask is to be used; a layer of photoresist then deposited; the photoresist exposed with the desired pattern by UV radiation; the photoresist developed to expose the reflective material in the areas where it is desired to deposit an absorber material; the reflective material etched away from these areas undercutting the resist; the absorber deposited through the openings in the resist and reflective layer and the resist then lifted off. |
申请公布号 |
JPS565981(A) |
申请公布日期 |
1981.01.22 |
申请号 |
JP19800085975 |
申请日期 |
1980.06.26 |
申请人 |
PERKIN ELMER CORP |
发明人 |
UIRIAMU DERIKU BATSUKUREE |
分类号 |
C23F1/00;G03F1/00;G03F7/09;H05K3/00;H05K3/04;H05K3/06 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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