发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE* AND SEMICONDUCTOR WAFER BONDING SUBSTRATE THEREFOR
摘要 <p>PURPOSE:To prevent the position of a pellet from deviating, by bonding the wafer on the tops of plural projections of a semiconductor wafer bonding substrate, dividing the wafer into pellets and simultaneously thermocompression bonding a plurality of leads to the pellets. CONSTITUTION:Grooves are provided on a quartz glass 1a to make projections 11 of 1mu in width and thickness and 1mm. in height, for example, or fiber glass projections of 150mu in diameter are implanted at the rate of 16 pieces per square millimeter in a glass epoxy plate so that the flatness is set within a range of + or -20mu. A wafer 4 is bonded at 3 on the substrate 1a and divided into pellets 6 by a saw 5. Since only a part of each projection 11 is cut by the saw, the lifetime of its cutting edge is lengthened. Since the quantity of heat transferred through the projections is less than a half of that transferred through the plain substrate, the temperature of a heater tip 10 can be made lower than that of a heater tip in a conventional case and the lifetime of the former heater tip 10 is about twice longer than that of the latter. Because the position of each pellet does not deviate and is hardly changed by the cutting, the leads 7 can be continuously gang-bonded by moving the substrate at an interval equal to the disposition spacing of the pellets.</p>
申请公布号 JPS564246(A) 申请公布日期 1981.01.17
申请号 JP19790079834 申请日期 1979.06.25
申请人 NIPPON ELECTRIC CO 发明人 BONSHIHARA MANABU
分类号 H01L21/301;H01L21/78;(IPC1-7):01L21/78 主分类号 H01L21/301
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