发明名称 Plasma-etching apparatus
摘要 A "planar" type plasma-etching apparatus wherein one electrode is a metallic mesh electrode, while the other electrode is a metallic plate electrode, and wherein a work piece is placed outside the mesh electrode. This apparatus has the advantage that a work piece having a large area can be etched uniformly over its whole surface.
申请公布号 US4243506(A) 申请公布日期 1981.01.06
申请号 US19790069058 申请日期 1979.08.23
申请人 HITACHI, LTD. 发明人 IKEDA, KIYOJI;HAYASHIDA, TETSUYA
分类号 C23F4/00;H01J37/32;(IPC1-7):B01K1/00 主分类号 C23F4/00
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