| 摘要 |
PURPOSE:To heighten the degree of integration, by laminating polycrystalline Si on an Si substrate provided with a circuit element and by selectively causing oxidation except for the lead-out port of the circuit element and thereafter doping an impurity to provide a resistor of desired resistance. CONSTITUTION:An N-type buried layer 2 is provided on a P<-> Si substrate 1. An N-type epitaxial layer 3 is laminated on the buried layer 2 and divided by P-layers 41, 42. A P-base layer 5, an N<+> emitter layer 61 and a collector lead-out layer 62 are produced. An oxide film is removed from the surface. Polycrystalline Si is laminated. An Si3N4 mask is used to make SiO2 films 81-85. Ions of P, As or B are injected into polycrystalline Si sections 71-74 unsimultaneously or simultaneously to manufacture resistors of desired resistances. Wirings 91-94 are provided to complete an element. According to this method, the degree integration of a device is heightened, its surface is flattened and the wirings are prevented from snapping. |
