| 摘要 |
PURPOSE:To obtain stable single-lateral-mode oscillation by cutting a portion of a current blocking layer provided between a semiconductor substrate and a lower clad layer in a stripe shape by using the edge of a step on the substrate. CONSTITUTION:A (100) surface of an n-type GaAs substrate 20 is anisotropically etched, and a step 28 having a (111) surface in the <01-1> direction is formed. A p-type Ga1-xAlxAs current blocking layer 21 is stacked, is cut with the edge of the step, and a cut-out portion 29 where currents are concentrated is formed. Then, n-type Ga1-xAlxAs 22, an n-type GaAs active layer 23, p-type Ga1-xAlxAs 24, and p-type GaAs 25 are stacked, and electrodes 26 and 27 are formed. In this constitution, the liquid epitaxial layer 21-25 are obtained by one continuous process, the active layer 23 is not exposed to the external air, and defects are not generated. Since the active layer is located directly on the current concentrating region 29, light is emitted with the same width as the region 29, and stable single-lateral-mode oscillation can be obtained. |
