| 摘要 |
PURPOSE:To obtain a semiconductor memory device which can enlarge a read voltage, by providing a pair of dynamic memory cells, where complementary information are written, in intersections between word lines and pairs of U-form bit lines having sense amplifiers as the center respectively. CONSTITUTION:Memory cells of MOS capacitors Mc1a and Mc1b, Mc2a and Mc2b... of the same capacity are formed in intersections between word lines W1, W2... and pairs of U-form bit lines BL11 and BL12, BL21 and BL22... having sence amplifier SA as the center, and capacitors Mc1a and Mc1b... of selected cells are precharged complementarily by complementary data output from write buffer WB, and further, data amplified by amplifier SA is read out into read buffer PB. The read voltage becomes twice by memory cells dependent upon these complementary MOS capacitors, so that the refresh period can be extended, and the collection degree of errors dependent upon alpha-ray irradiation can be improved, and constitution can be small- size. |
