| 摘要 |
PURPOSE:To enable provision of a photoelectric converter having high conversion efficiency by locally incorporating hydrogen or halogen elements in nonmonocrystalline semiconductor formed on a substrate. CONSTITUTION:A nonmonocrystalline semiconductor layer made of Si, SiC, Ge, Sn or the like is coated on a conductive substrate made of stainless steel, titanium or the like, a semiconductor substrate made of silicon, silicon carbide, germanium or the like or an insulating substrate made of alumina, glass or the like. Then, hydrogen or halogen elements are mixed with the light irradiating side, heat energy is selectively applied, or ultraviolet ray or the like is irradiated thereto to locally retain the hydrogen or halogen elements. Or, they are uniformly added in parallel with the surface of light irradiating side, or so added at a density gradient as to become high density in the surface layer and lower density as becoming deeper. In this manner, energy gap in the semiconductor layer is provided to enhance the photoelectric conversion efficiency. |
