| 摘要 |
PURPOSE:To integrate a plurality of semiconductor lasers varied in a wide range of wavelength into the same substrate in the combination of the optical feedback of synchronous structure with the semiconductor crystal varied in the forbidden band range of the active layer. CONSTITUTION:An n-type Al0.3Ga0.7As layer 2, a p-type AlxGai-xAs layer 3, a p-type Al0.15Ga0.85As layer 4 and a p-type Al0.07Ga0.93 layer 5 are continuously formed on a surface of an n-type GaAs substrate 1 by the liquid growth. Thereafter, the thickness of the layer 5 is varied cyclically by the photolithography utilizing the laser interference to have a p-type Al0.3Ga0.7As layer 6 growing. The first- forth stripelike holes 13, 23, 33 and 43 are etched on the layer 6 and the first- fourth p side electrodes 14, 24, 34 and 44 are formed through an SiO2 layer 8. The n side electrode 9 is formed on the other surface of the substrate 1. The forbidden side band range of each active layer is composed with a plurality of cyclic structures. A change is given to a plurality of resonators almost vertical to the axial direction thereof to vary the cycle of the cyclic structure corresponding to the forbidden band range whereby the laser is integrated into the substrate 1 in a wide range of wavelength. |
