| 摘要 |
PURPOSE:To obtain an Al pattern with high accuracy and miniature structure by a method wherein a mask is formed by a Cr2O3 film on an Al film being selectively etched utilizing gas plasma and futhermore the Al film is selectively etched utilizing CCl4 gas plasma. CONSTITUTION:An SiO2 film 12, an Al film 13 and a Cr2O3 film 14 are formed laminated on an Si substrate 11, and a resist mask 16 is applied. Utilizing gas plasma of CF4 gas with addition of few % of O2 the Cr2O3 film 14 is etched away. Next thereto utilizing unremoved Cr2O3 film 17 as a mask plasma etching is performed by plasma of mixture which consists CCl4 and He. When a device of parallel plate type is utilized, a physical sputter etching effect is applied on a etching object with addition of a chemical etching reaction. With an optimal combination of a etching object, masking materials and plasma guns, damage on a resist film is eliminated, and the Al pattern with miniature structure can be obtained. |
