| 摘要 |
PURPOSE:To increase the losses at both sides of a stripe of a semiconductor laser element and to prevent the expansion of lateral mode therein by forming absorbers for the light at both sides of the stripe structure. CONSTITUTION:The first layer 1 made of n-Ga1-xAlxAs layer, the second layer 2 made of n-Ga1-yAlyAs layer, the third layer 3 made of p-Ga1-xAlxAs layer and the fourth layer 4 made of p-GaAs layer are sequentially epitaxially grown to form a laminate. The second layer 2 corresponds to a laser oscillation active layer. An n-GaAs substrate 5 is grown at the first layer 1 of the laminate as growing substrate, and the first layer 1 side is formed with recess at the junction surface of the first layer 1. p-Type electrode 6 and n-type electrode 7 are formed at the fourth layer 4 and the n-type GaAs substrate 5 side, an insulating layer 8 is interposed between the fourth layer 4 and the p-type electrode 6 side, and oxide stripe structure is formed to form a current concentrating mechanism. |
