GALLIUM NITRIDE LIGHT EMITTING ELEMENT AND ITS MANUFACTURE

摘要

PURPOSE:To improve light emitting efficiency of a GaN light emitting element by a method wherein a GaN layer is well adapted to a heat oxide film employed and occurrence of a non-radiation re-coupling center is suppressed at the adapted area. CONSTITUTION:An n-type GaN 6 doped slightly with Zn on the surface (0001) of a sapphire 1 is pre-heated on a place in a foreground to a constant heat portion inside a furnace, and then placed on a specified position. N2 gas flow path is switched over to make the gas flow through a bubbler 8 filled with disfilled water. Quantity of water vapor supplied is controlled through both the temperature of a constant temperature oven 9 and the N2 gas flow regulated by a flow meter 12. Thus a heat- oxide film 20 is created on the surface of GaN2. An electrode 4 is vaccum-evaporated thereto, and an In dot electrode 5 is attached to one side thereof. By this constitution, a homogeneous insulated-film adapted to GaN can be obtained so that a device of high light emitting efficiency is produced.