| 摘要 |
A semiconductor charge coupled device (CCD) (10) with split electrode charge sensors (8, 1, 8, 2; 12, 1, 12, 2) contains a localized connecting impurity doped region (8, 3, 12, 3), of opposite conductivity type from that of the semiconductor transfer sites, underlying the gap between each pair of split electrodes, and each such connecting region is contiguous with both transfer sites underlying each pair of split electrodes, thereby serving to equilibrate the potentials of both such transfer sites. The entire downstream edge of each of these connecting regions is bounded by a seperate localized channel stopping auxiliary barrier region (8, 4, 12, 4) of higher threshold than that of the charge transfer channel, in order to suppress dynamic signal charge transfer inefficiency caused by spurious contributions of charge from the connecting regions to the propagating signal charge packets. |
