SEMICONDUCTOR DEVICES HAVING A RECTIFYING METAL-TO- SEMICONDUCTOR JUNCTION

摘要

A semiconductor device having a high-voltage rectifying metal-to-semiconductor junction comprising a semiconductor body with a semiconductor layer of one conductivity type adjoining a surface of the body and a metal layer extending in contact with a portion of the surface, this metal layer forming a rectifying junction with the layer of one conductivity type. A low resistance ohmic connection is provided to the layer of the one conductivity type and this layer comprises first and second sub-layers with the first sub-layer extending adjacent a surface of the body. The first sub-layer has a doping different from that of the second sub-layer on which it is present. A plurality of isolated discrete regions of opposite conductivity type are present in the vicinity of the boundary between the first and second sub-layers and these regions extend to below the surface portion contacted by the metal layer.