发明名称 VAPOR DEPOSITING APPARATUS
摘要 PURPOSE:To form a thin film with uniform thickness easily by a mechanism wherein a substrate plate is partially shielded from an evaporating sourse by a shielding plate constituting from a material of which thermal expansion coefficient is equal or almost equal to an evaporating sourse as well as the said shielding plate and a substrate plate are subjected to mutual movement. CONSTITUTION:A target electrode 1 and a shielding plate 4 constituting a material of which thermal expansion coefficient is equal or almost equal to a target substance is fixed and vapor deposition carried out by spattering within an Ar atmosphere while a base plate 2 is rotated around a target electrode 1. By using a shielding plate, a portion of a vapor deposited film with uniform thickness formed on each substrate plate 3a-3c, 3a'-3c' is remarkably enlarged. If vapor deposition by spattering is repeated and a target substance is vapor deposited on a shielding plate 4, because a shielding plate 4 is constituted from a material of which thermal expansion coefficient is equal or almost equal to an evaporating sourse, a shielding plate is not almost deformed by temp. cycle according to vapor depositing operation and a film with predetermined thickness can be formed over a long period in good reproducibility.
申请公布号 JPS55110775(A) 申请公布日期 1980.08.26
申请号 JP19790017018 申请日期 1979.02.15
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KICHI KENZOU;YAMAZAKI OSAMU;WASA KIYOTAKA;HAYAKAWA SHIGERU
分类号 C23C14/04 主分类号 C23C14/04
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