发明名称 |
Passivating chemically deposited nickel-phosphorus layer - by immediately treating with soln. contg. oxygen and/or peroxide |
摘要 |
<p>Chemically deposited Ni-P layers are treated immediately after deposition with a soln. contg. O2 and/or a peroxide to form a passive surface layer. The treatment soln. can consist of (a) O2 bubbling through fresh water, (b) an H2O2 soln. esp. an NH4OH-contg. H2O2 soln. or (c) a soln. contg. an easily hydrolysable peroxide or peroxy cpd. The Ni-P layer is freed from plating soln. and oxidised "in statu nascendi". Surface resistance change of treated Ni-P thin layer resistances having surface resistance 20 OMEGA/sq changes by less than +2% after accelerated ageing.</p> |
申请公布号 |
DE2902415(A1) |
申请公布日期 |
1980.07.31 |
申请号 |
DE19792902415 |
申请日期 |
1979.01.23 |
申请人 |
LICENTIA PATENT-VERWALTUNGS-GMBH |
发明人 |
OSTWALD,ROBERT,DR.-ING.;VOIT,GABRIELE |
分类号 |
C23C18/36;C23C22/60;C23C22/68;H01C17/18;(IPC1-7):C23F7/02;H01C7/00;C23C3/02 |
主分类号 |
C23C18/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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