发明名称 |
Chemical vapour deposition appts. for pure semiconductor - with silver or silver plated steel bell to withstand pressure differential |
摘要 |
<p>Equipment for the deposition of pure semiconductor material, esp. Si, by the thermal decompsn. of a gaseous cpd. on a substrate heated to the decompsn. temp. of the cpd. concerned by the passage of an electric current, consists of a metal base plate with gas inlet and outlet nozzles, a holder for the substrate and electric leads, covered by a coolable bell having a gas tight seal with the edge of the base plate. The novel feature is that the reaction chamber, including the surface of the bell, consists of Ag or Ag-plated steel. Deposn. can be carried out under pressure without the need to apply an equal pressure to the outside of the bell, as in the case of a quartz bell.</p> |
申请公布号 |
DE2854707(A1) |
申请公布日期 |
1980.07.31 |
申请号 |
DE19782854707 |
申请日期 |
1978.12.18 |
申请人 |
WACKER-CHEMITRONIC GESELLSCHAFT FUER ELEKTRONIK-GRUNDSTOFFE MBH |
发明人 |
KOEPPL,FRANZ,DIPL.-ING.;HAMSTER,HELMUT;GRIESSHAMMER,RUDOLF,DIPL.-CHEM.DR.;LORENZ,HELMUT |
分类号 |
C01B33/035;C23C16/24;(IPC1-7):B01J17/32 |
主分类号 |
C01B33/035 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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