发明名称 Chemical vapour deposition appts. for pure semiconductor - with silver or silver plated steel bell to withstand pressure differential
摘要 <p>Equipment for the deposition of pure semiconductor material, esp. Si, by the thermal decompsn. of a gaseous cpd. on a substrate heated to the decompsn. temp. of the cpd. concerned by the passage of an electric current, consists of a metal base plate with gas inlet and outlet nozzles, a holder for the substrate and electric leads, covered by a coolable bell having a gas tight seal with the edge of the base plate. The novel feature is that the reaction chamber, including the surface of the bell, consists of Ag or Ag-plated steel. Deposn. can be carried out under pressure without the need to apply an equal pressure to the outside of the bell, as in the case of a quartz bell.</p>
申请公布号 DE2854707(A1) 申请公布日期 1980.07.31
申请号 DE19782854707 申请日期 1978.12.18
申请人 WACKER-CHEMITRONIC GESELLSCHAFT FUER ELEKTRONIK-GRUNDSTOFFE MBH 发明人 KOEPPL,FRANZ,DIPL.-ING.;HAMSTER,HELMUT;GRIESSHAMMER,RUDOLF,DIPL.-CHEM.DR.;LORENZ,HELMUT
分类号 C01B33/035;C23C16/24;(IPC1-7):B01J17/32 主分类号 C01B33/035
代理机构 代理人
主权项
地址