发明名称 |
Method for electrolytically etching of a recrystallized aluminum foil |
摘要 |
A method of etching a recrystallized aluminum foil which utilizes potentiostatic etching to roughen the foil to obtain a particularly high roughening factor. The etching preferably occurs in two stages in which the etching current density of the first stage is above the current density which creates an undesired pitting of the aluminum and a second stage which utilizes an etching current density which is below the density which creates pitting of the aluminum.
|
申请公布号 |
US4213835(A) |
申请公布日期 |
1980.07.22 |
申请号 |
US19790002966 |
申请日期 |
1979.01.12 |
申请人 |
SIEMENS AG |
发明人 |
FICKELSCHER, HORST |
分类号 |
C25F3/04;H01G9/04;H01G9/055;(IPC1-7):C25F3/04 |
主分类号 |
C25F3/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|