| 摘要 |
PURPOSE:To obtain the epitaxial active layer having fewer defects such as dislocation by a method wherein etch-pits are caused to be appeared, the part including fewer etch-pits is cut off selectively, and epitaxial growth is made on thus obtained substrate. CONSTITUTION:After etching the surface of a substrate to be used for epitaxial growth so as to make etch-pits appeared, the part of the substrate with low density of etch-pits is cut off selectively and visually. When the etch-pits are small and shallow, the forms of the etch-pits are removed through the etching by mirror abrasive liquids and then epitaxial growth is made directly. When the etch-pits are large and deep, epitaxial growth is made after performing melt-back, for example. Furthermore, in some cases epitaxial growth is made after developing a buffer layer. |
