| 摘要 |
<p>The formation of a thick silicon oxide layer is intended primarily for integrated circuit of metal-oxide-semiconductor (MOS) and bipolar type. The layer is to be produced in a given region of a suitable semiconductor substrate, whose production is the first step of the process. Then the material of the substrate is selectively removed and parallel grooves are formed in the given region. Ridges are similarly formed between adjacent grooves. The depth and width of the grooves and the geometry of their side walls are selected so as to provide a continuity of silicon oxide films, formed during heat treatment of the silicon substrate. The width of a ridge between two adjacent grooves also permits the formation of a silicon oxide film during heat treatment, which is carried out in an oxidising atmosphere which converts the ridges into silicon oxide and fills the grooves with this oxide. Pref. the width of the ridges is smaller than that of the grooves.</p> |
