发明名称 ELECTRODE FORMING METHOD
摘要 PURPOSE:To suppress grid mismatching between two layers to improve a close adhesion property between two layers by providing a region, where the mixture ratio of two materials is changed gradually, near the boundary between two layers of the electrode of a multi-layer structure in case of formation of electrodes of an elastic surface wave element, etc. CONSTITUTION:Two kinds of material are flown as molecular beams by the molecular beam epitaxial method to form the electrode of a two-layer structure. That is, electrode 7 of the first layer consisting of one material is formed on vibrator 6, etc., which becomes a substrate, and layer 8 where the first and the second layers are mixed exists on electrode 7, and electrode 9 of the second layer consisting of the other material is formed on layer 8. In region 8, the material of layer 7 is reduced gradually and the material of layer 9 is increased gradually from layer 7 toward layer 9. That is, the region where the mixture ratio of two materials is changed gradually is provided near the boundary between two layers of the electrode of a multilayer structure, so that grid mismatching between two layers can be suppressed to improve their close adhesion property.
申请公布号 JPS5571309(A) 申请公布日期 1980.05.29
申请号 JP19780145017 申请日期 1978.11.24
申请人 SEIKO INSTR & ELECTRONICS 发明人 TAKAHASHI KUNIHIRO
分类号 H03H3/007;H03H3/02;H03H3/08;H03H9/13;H03H9/145 主分类号 H03H3/007
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