发明名称 FORMING METHOD FOR CLOSELY CONTACTED LAYER OF THINNFILM MAGNETIC HEAD
摘要 PURPOSE:To strengthen adhesion between a substrate and magnetic material by forming an airtight layer, provided between the substrate and magnetic material, in two layers and then by thermally processing the 1st layer together with the substrate. CONSTITUTION:On single-crystal substrate 5 of crystal, sapphire, etc., metal such as Ti and Cr is vapor-deposited and then bonded by sputtering to a film thickness of approximate 500Angstrom and through a heat treatment in the air, 1st closely contacted layer 6 is formed (preferably at 370-420 deg.C for about one hour when a Ti layer is provided on the crystal substrate). Next, 2nd airtight layer 7 of Ti, Cr, etc., of approximate 500Angstrom in thickness is formed on the above-mentioned closely contacted layer 6 and on it, magnetic material 8 of Permalloy, erc., is further bonded to form a thin-film magnetic head core.
申请公布号 JPS5567928(A) 申请公布日期 1980.05.22
申请号 JP19780138807 申请日期 1978.11.13
申请人 FUJITSU LTD 发明人 TANAKA TOSHIO;DAI SHIYOUICHI;KUME TOMIO
分类号 G11B5/31;H01F41/14 主分类号 G11B5/31
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