发明名称 Highly sensitive Hall element
摘要 A semiconductor capable of exhibiting an electron transfer effect in a high electric field is used as a Hall element. Application of a voltage large enough to give rise to an electron transfer effect to the current input electrodes of the Hall element brings about a decrease in the concentration of electrons contributing to the Hall effect occurring within the semiconductor, an increase in the Hall coefficient and a notable enhancement in the sensitivity of the Hall element.
申请公布号 US4204132(A) 申请公布日期 1980.05.20
申请号 US19770822658 申请日期 1977.08.08
申请人 AGENCY OF IND SCIENCE & TECHNOLOGY;JAPAN INTERNATIONAL TRADE IND MIN OF 发明人 FUJISADA, HIROYUKI;KATAOKA, SHOEI;SUGIYAMA, YOSHINOBU
分类号 H01L43/06;(IPC1-7):H03B7/00 主分类号 H01L43/06
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