发明名称 |
Highly sensitive Hall element |
摘要 |
A semiconductor capable of exhibiting an electron transfer effect in a high electric field is used as a Hall element. Application of a voltage large enough to give rise to an electron transfer effect to the current input electrodes of the Hall element brings about a decrease in the concentration of electrons contributing to the Hall effect occurring within the semiconductor, an increase in the Hall coefficient and a notable enhancement in the sensitivity of the Hall element.
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申请公布号 |
US4204132(A) |
申请公布日期 |
1980.05.20 |
申请号 |
US19770822658 |
申请日期 |
1977.08.08 |
申请人 |
AGENCY OF IND SCIENCE & TECHNOLOGY;JAPAN INTERNATIONAL TRADE IND MIN OF |
发明人 |
FUJISADA, HIROYUKI;KATAOKA, SHOEI;SUGIYAMA, YOSHINOBU |
分类号 |
H01L43/06;(IPC1-7):H03B7/00 |
主分类号 |
H01L43/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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