| 摘要 |
<p>A semiconductor device comprises a semiconductor substrate having at least one semiconductor region formed therein and a laminate structure including a polycrystalline silicon layer (24) formed on the semiconductor substrate and a metal layer (25) formed on the polycrystalline silicon layer (24). The metal layer (25) extends beyond the periphery of the polycrystalline silicon layer (24). In a variant a polycrystalline silicon layer is disposed on an oxide layer over the substrate and constitutes a resistor the end contacts of which are formed by metallisations which extend beyond the end and the lateral edges of part of the polycrystalline layer. <IMAGE></p> |
