| 摘要 |
PURPOSE:To remarkably increase the efficiency of graft polymn. of an exposed resist with a prescribed monomer by exposing the resist to an atmosphere of a monomer different from the prescribed monomer before graft polymn. CONSTITUTION:When a resist 2 exposed and made dense by prebaking is subjected to graft polymn. with a prescribed monomer 7 in a lithographic process utilizing radiation graft polymn., the resist 2 is exposed to a vapor or liq. phase of at least one kind of monomer different from the monomer 7 to swell the resist polymer before graft polymn. The monomer 7 diffuses easily in voids formed in the structure of the resist polymer by the swelling, a graft polymn. reaction proceeds easily and the efficiency of graft polymn. is remarkably increased. |
