发明名称 |
INTEGRATED CIRCUIT HAVING COMPLEMENTARY BIPOLAR TRANSISTORS |
摘要 |
<p>An integrated circuit having two vertical complementary bipolar transistors formed from a semiconductor substrate of a first conductivity type, and a deposited layer of second semiconductor type is disclosed. Conductor tracks consisting of portions of the semiconductor layer are supported by a dielectric, while other portions of the semiconductor layer are used for the contacts for certain active zones for the transistors.</p> |
申请公布号 |
CA1075369(A) |
申请公布日期 |
1980.04.08 |
申请号 |
CA19770269268 |
申请日期 |
1977.01.06 |
申请人 |
N.V. PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
EDLINGER, WOLFGANG F. J.;DE BREBISSON, MICHEL;BIET, JEAN-PIERRE H.;DECROUEN, JEAN-MICHEL |
分类号 |
H01L29/70;(IPC1-7):01L29/70 |
主分类号 |
H01L29/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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