| 摘要 |
PURPOSE:To prevent leak current of PN joint from going out from a capacitor's bottom electrode to grounding point of a circuit by allowing a semiconductor layer, which is a bottom electrode of capacitor of MOS structure, to make an ohmic contact with a reversal electric conductive layer. CONSTITUTION:A P-type semiconductor layer 6 is provided in such a manner as to surround an n<+>-type semiconductor layer 7 which is a bottom electrode of a capacitor C of MOS structure, and the n<+>-type semiconductor layer 7 and the P-type semiconductor layer 6 are shortcircuited by a terminal 2 of the bottom electrode. A leak current generating in a PN joint J1 goes out from an N-type semiconductor layer 5, having potential of a power pource Vcc, to the P-type semiconductor layer 6, and a leak current I2 generating in a PN joint J2 goes our from the N-type semidonductor layer 5 to a grounding point of a circuit. |
