发明名称 |
Electrolithographic process which makes it possible to improve the sensitivity of masking resins, and a mask obtained by this kind of process |
摘要 |
A process rendering certain electron masking resins more sensitive or rendering polymers which are unsufficiently sensitive to electrons suitable for industrial utilization, in particular for application to electron masking, a method which employs scanning with a very fine electron beam controlled by the computer. The process involves electron irradiation at low dose levels, sufficient however to create free radicals, followed by diffusion of an appropriate copolymerizing monomer by grafting to the initial polymeric chain opened by the irradiation process. The solubility of the copolymer vis-a-vis certain solvents is selective, enabling the masks to be developed.
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申请公布号 |
US4195108(A) |
申请公布日期 |
1980.03.25 |
申请号 |
US19780901617 |
申请日期 |
1978.05.01 |
申请人 |
THOMSON-CSF S A |
发明人 |
DUBOIS, JEAN-CLAUDE;GAZARD, MARYSE |
分类号 |
G03F7/039;G03F7/38;H01L21/027;(IPC1-7):B05D3/06 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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