| 摘要 |
PURPOSE:To obtain an element long lasting and uniform in characteristic at one time of crystal growth by forming a mask to check crystal growth on a semiconductor substrate with a rugged surface and controlling a growth solution for thermally balanced condition. CONSTITUTION:A groove 22 is provided in stripe on the surface of a semiconductor substrate 21. A growth check film or SiN3 film 23 for example is laminated on the substrate 21. Next, it is partly etched off. In this case, a window on the protrusion of the substrate 21 is patterned wide and that on the dent narrow. Next, first layer 24, second layer 25, third layer 26 and fourth layer 27 are grown in sequence as dropping the temperature according to liquid phase epitaxial growth. In this case, the solution to grow the first layer 24 is supercooled to transmit ruggedness of the substrate 21 conscientiously. The solution for the second layer 25 is kept under thermally balanced condition, and the portion with wide window is grown thin and that with narrow window thick. Therefore a film thickness symmetrical to the center line of the layer is obtainable for the layer 25. Solutions for the layers 26, 27 are kept supercooled. Therefore the layers 26, 27 transmit ruggedness of the layer 25. |
