Delay circuit for state changeover of transistor - operates at low temps. using pin=diode doped in intrinsic zone with gold atoms
摘要
<p>The delay circuit has the transistor (or similar active component) containing a PIN diode cooled to less than 150 deg.K. A voltage is applied to this diode that is greater than its forward voltage and represents a measure of the wanted delay time. The PIN diode consists of silicon or gallium arsenide and is doped in its intrinsic zone with gold atoms to produce deep impurity regions. The intrinsic zone consists of n-type silicon. The advantage lies in simplicity and cheapness.</p>
