发明名称 DIODE
摘要 PURPOSE:To automate by providing a multilayer wiring structure to a wiring substrate thsu eliminating positioning of turning angle when a face-down bonding is given to a semiconductor chip. CONSTITUTION:A diode chip 10 has a disc-shaped anode electrode 15 which is surrounded by a ring-shaped electrode 16. A multilayer wiring substrate consists of a ring-shaped second wiring layer 8 which corresponds to the electrode 15, a ring- shaped wiring layer 9 which corres-ponds to the electrode 16 and is located on the surface surrounding the layer 8, and the first wiring layer 6a which connects the electrode and which crosses to the layer 9 through an in between layers insulator 7. Then the corresponding electrodes between the diode chip and the multilayer wiring substrate are connected. By so doing, a notch section required to connect the inner electrode, is eliminated from the ring-shaped electrode. Therefore, positioning of turning angle for the semiconductor chip is eliminated, thus preventing shortcircuits between the both electrodes during face-down bonding.
申请公布号 JPS5516415(A) 申请公布日期 1980.02.05
申请号 JP19780088430 申请日期 1978.07.21
申请人 HITACHI LTD 发明人 MEGURO MASAO;KAWABATA TSUNETOSHI;MATSUMOTO HIROYUKI
分类号 H01L29/861;H01L33/38;H01L33/44;H01L33/62 主分类号 H01L29/861
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