| 摘要 |
<p>PHN 8222 Method of manufacturing a semiconductor device, in particular a capacitance diode, a zener diode or an avalanche diode, by using only one masking step. According to the invention, a first masking layer, for example a silicon oxide layer, is provided on a substrate of one conductivity type the etching rate of which at the surface is increased, for example, by an argon bombardment. A second masking layer is provided on the first masking layer and a window is etched therein. Via said window a first zone preferably of the same conductivity type as the substrate is implanted while using the second masking layer as a mask. The first masking layer is etched via the same window so that a bevelled edge is formed. By ion implantation via the window and a part of the bevelled edge, a second zone is formed which forms a p-n junction preferably with the first zone and the substrate.</p> |
