| 摘要 |
<p>A word-by-word electrically reprogrammable nonvolatile memory has memory cells arranged in a matrix and provided with a control circuit, interconnected with the memory matrix in such a manner that variable erase and write durations are provided for each memory line. The termination of the variable durations is indicated by attainment of a predetermined erase or, respectively, write condition of one or more memory cells from the memory line to be erased or written. The erase or write condition of these cells is monitored during the erase or write duration of the memory line to provide a condition-effected termination of the variable duration.</p> |
