| 摘要 |
<p>A method of forming a channel stopper in a semiconductor structure containing a substrate including the steps: forming a protective layer of material of a predetermined thickness over a portion of said substrate; implanting ions through said protective layer using a dosage of at least 1x10<1><5> ions/cm<2> to form a channel stop region in said substrate beneath said protective layer; then annealing said structure before the following oxidizing step; then, oxidizing said structure to form an oxide layer over said portion of said substrate to a thickness no greater than substantially 1 micrometer (micron), thereby to minimize the lateral encroachment of said oxide material, where the thickness of said protective layer is such that said implanting, annealing, and oxidizing does not cause stacking faults in said channel stop region.</p> |
