| 发明名称 |
Light emitting semiconductor device |
| 摘要 |
A light emitting semiconductor device wherein a p-n junction is defined by a ditch and wherein the ditch either extends to a low resistance layer or is away from the low resistance layer at most 1/2 of the width of the ditch is disclosed. It has the merit that the near field pattern is much more uniform than in a prior-art device.
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| 申请公布号 |
US4183039(A) |
申请公布日期 |
1980.01.08 |
| 申请号 |
US19780913055 |
申请日期 |
1978.06.06 |
| 申请人 |
HITACHI LTD |
发明人 |
AOKI, MASAAKI;ITO, KAZUHIRO;KURATA, KAZUHIRO;MORI, MITSHIURO;MORIOKA, MAKOTO;ONO, YUICHI |
| 分类号 |
H01L21/22;H01L33/14;H01L33/30;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/22 |
| 代理机构 |
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代理人 |
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| 地址 |
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