发明名称 HIGH FREQUENCY TRANSISTOR
摘要 PURPOSE:To make the parasitic inductance, which a resistor and a capacitor have, small to prevent oscillation by incorporating the resistor and the capacitor in a transistor package in respect to a high frequency transistor. CONSTITUTION:Resistance element 21 is electrically and mechanically connected onto base conductive layer 10, and capacitor element 22 is electrically and mechanically connected onto emitter conductive layer 11a, and resistance element 21 and capacitor element 22 are connected by metallic narrow wire 23. The value of the inductance which oscillation preventing elements have is only the inductance which metallic narrow wire 23, so that the inductance may be very small in comparison with a conventional one.
申请公布号 JPS54159866(A) 申请公布日期 1979.12.18
申请号 JP19780069062 申请日期 1978.06.07
申请人 发明人
分类号 H01L25/00;H01L23/64 主分类号 H01L25/00
代理机构 代理人
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