| 摘要 |
PURPOSE:To simplify manufacture and to obtain the effect equivalent to that of a barrier region by narrowing the channel width, where the barrier region of a charge transfer path should be formed, in a shape of a charge barrier by making use of narrow channel effect. CONSTITUTION:Tips of respective short charge barriers 3a, 3b...4a, 4b... are bent as shown by 3aa...4aa... and terminals face in the same direction. Each charge barrier bends after crossing bisector X.X' of the width of the charge transfer region. When two terminal parts are arranged facing at an interval of approximately 3 to 5 mum, barrier regions 201, 202... between the both fave small surface potentials through narrow channel effect and a barrier function equivalent to that of an impurity dope region is displayed to stop the reverse flow of charge, so that the charge can be transferred along curve 5 collectively. In this way, the high-density layer as a charge barrier is provided continuously or discontinuously between short charge barriers which adjoin and face mutually and the barrier region can be formed at the same time, so that processes of manufacture can be reduced in number greatly. |
