发明名称 WAFER DEFOSITING APPARATUS FOR SEMICONDUCTOR FABRICATION
摘要 A wafer depositing apparatus for fabricating a semiconductor is provided to prevent reaction gas from being deposited on an open/shut door by flowing inert gas between the inlet/outlet of a process chamber and the open/shut door. An inlet/outlet(120) into and from which a wafer is loaded/unloaded is formed in a process chamber(110). The inlet/outlet of the process chamber is opened/shut by an open/shut door(130). A block unit(200) forms inert gas flow for separating the process chamber from the open/shut door to prevent the reaction gas of the process chamber from being deposited on the open/shut door, formed in the inlet/outlet. The inert gas can be selected from an inert gas group of N, Ne, Ar, Kr, Xe and Rn.
申请公布号 KR20070074819(A) 申请公布日期 2007.07.18
申请号 KR20060002834 申请日期 2006.01.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, HEE SEOK
分类号 H01L21/205 主分类号 H01L21/205
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